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The etch study of ferroelectric Bi 3:25 La 0:75 Ti 3 O 12 (BLT) thin films has been performed using C 2 F 6 , Cl 2 and HBr gases in an inductively coupled plasma (ICP). The etch rate and etch selectivity of BLT films were investigated as a function of gas concentration for each gas. The etch rates in the range of 700-900 A/min were obtained for C 2 F 6 gas while the etch rates by Cl 2 and HBr gases were in the range of 700-1100 A/min under the etch conditions used in this study. The etchdoi:10.1143/jjap.42.1452 fatcat:6hjkrps3mfgcxb2b2t4g3evjry