Effect of Etch Gas on Dry Etching of Ferroelectric Bi3.25La0.75Ti3O12Thin Films

Young Soo Song, Hye In Kim, Chee Won Chung
2003 Japanese Journal of Applied Physics  
The etch study of ferroelectric Bi 3:25 La 0:75 Ti 3 O 12 (BLT) thin films has been performed using C 2 F 6 , Cl 2 and HBr gases in an inductively coupled plasma (ICP). The etch rate and etch selectivity of BLT films were investigated as a function of gas concentration for each gas. The etch rates in the range of 700-900 A/min were obtained for C 2 F 6 gas while the etch rates by Cl 2 and HBr gases were in the range of 700-1100 A/min under the etch conditions used in this study. The etch
more » ... s of BLT films by each gas were observed using field emission scanning electron microscopy (FESEM). Cl 2 gas was more effective in obtaining a fast etch rate and clean etch profile than C 2 F 6 and HBr gases. The surface chemistry of BLT films etched in a Cl 2 plasma was analyzed by X-ray photoelectron spectroscopy (XPS).
doi:10.1143/jjap.42.1452 fatcat:6hjkrps3mfgcxb2b2t4g3evjry