The etch study of ferroelectric Bi 3:25 La 0:75 Ti 3 O 12 (BLT) thin films has been performed using C 2 F 6 , Cl 2 and HBr gases in an inductively coupled plasma (ICP). The etch rate and etch selectivity of BLT films were investigated as a function of gas concentration for each gas. The etch rates in the range of 700-900 A/min were obtained for C 2 F 6 gas while the etch rates by Cl 2 and HBr gases were in the range of 700-1100 A/min under the etch conditions used in this study. The etch

more »

... s of BLT films by each gas were observed using field emission scanning electron microscopy (FESEM). Cl 2 gas was more effective in obtaining a fast etch rate and clean etch profile than C 2 F 6 and HBr gases. The surface chemistry of BLT films etched in a Cl 2 plasma was analyzed by X-ray photoelectron spectroscopy (XPS).