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We report the observation of H 2 adsorption on the H͞Si͑100͒ surface using scanning tunneling microscopy. Predosing the surface by atomic H leads to the efficient adsorption of H 2 in an interdimer configuration of adjacent singly occupied dimers. This strong and local promotion of dissociative adsorption is explained by the noninteracting character of the relevant dangling bonds. By way of contrast, H 2 sticking is strongly inhibited on the clean Si͑100͒-͑2 3 1͒ surface where the danglingdoi:10.1103/physrevlett.83.1810 fatcat:ua62fpi4lrfljlxskd73dcdmyy