Dissociative Adsorption ofH2on Si(100) Induced by Atomic H

A. Biedermann, E. Knoesel, Z. Hu, T. F. Heinz
1999 Physical Review Letters  
We report the observation of H 2 adsorption on the H͞Si͑100͒ surface using scanning tunneling microscopy. Predosing the surface by atomic H leads to the efficient adsorption of H 2 in an interdimer configuration of adjacent singly occupied dimers. This strong and local promotion of dissociative adsorption is explained by the noninteracting character of the relevant dangling bonds. By way of contrast, H 2 sticking is strongly inhibited on the clean Si͑100͒-͑2 3 1͒ surface where the dangling
more » ... e the dangling bonds are rendered less reactive by their mutual interaction.
doi:10.1103/physrevlett.83.1810 fatcat:ua62fpi4lrfljlxskd73dcdmyy