Electrical and Optical Transport Characterizations of Electron Beam Evaporated V Doped In2O3 Thin Films

Md. Ariful Islam, Ratan Chandra Roy, Jaker Hossain, Md. Julkarnain, Khairul Alam Khan
2016 Materials Research  
Vanadium (5 at. %) doped Indium Oxide (V: In 2 O 3 ) thin films with different thicknesses (50 nm, 100 nm and 150 nm) were prepared onto glass substrate by electron beam evaporation technique in a vacuum of about 4×10 -3 Pa. X-ray diffraction (XRD) pattern revealed that the prepared films of thickness 50 nm are amorphous in nature. Temperature dependence of electrical resistivity was studied in the 300 < T < 475 K temperature range. The films exhibit a metallic behavior in the 300 < T < 380 K
more » ... nge with a positive temperature coefficient of the resistivity (TCR), whereas at T > 380 K, the conduction behavior turns into a semiconductor with a negative TCR. Optical studies revealed that the films of thickness 50 nm possess high transmittance of about 86 % in the near-infrared spectral region. The direct optical band gap lies between 3.26 and 3.00 eV depending on the film thickness.
doi:10.1590/1980-5373-mr-2015-0753 fatcat:psxbs2dirffgvdx35r7354gxkq