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Microstructure and Resistivity of Laser-Annealed Au-Ge Ohmic Contacts on GaAs
Journal of the Electrochemical Society
The results of a study of laser-annealed Au-Ge ohmic contacts to GaAs are presented. The specific contact resistivity was observed to decrease with increasing laser energy density while the grain size of the polycrystalline microstructure (as observed by transmission electron microscopy) increased. At higher energy densities, both parameters were found to remain constant within the experimental conditions used. Transmission electron micrographs, and sputtering Auger electron spectroscopic datadoi:10.1149/1.2127214 fatcat:dh5frd647rdxtmmgm4uunh7y2u