Modelling Challenges towards Virtual Prototyping of SiC based Power Modules

Ulrike Grossner
2017 Journal of The Japan Institute of Electronics Packaging  
Currently, power electronics on both academic and industrial level is experiencing a major change in the essential building block of all power electronic systems, the actual semiconductor device. Whereas silicon (Si) based switches and diodes have dominated the research, development, and application from small discrete devices to large high-power modules since its beginning, in the recent years the market has seen a sharp rise in offerings using alternative, mainly wide bandgap materials such
more » ... silicon carbide (SiC) and gallium nitride (GaN). With these materials, also new challenges in power module design and manufacturing arise. This includes entirely new products such as in automotive and energy applications. Moreover, as development cycles for power modules become shorter and the return-on-investment into newly developed product ranges becomes more important, the need for virtual rather than conventional prototyping in the development process requires significant improvements in both modeling tools as well as approaches. The paper discusses the current status of such modeling tools based on studies of a vertical SiC MOSFET, giving an outlook on the requirements for successful virtual prototyping of SiC-based power modules. Both SiC and GaN are regarded excellent semiconductor materials for the design of power electronic devices due to properties such as a wider band-gap, and, hence, an order of magnitude higher breakdown electric field compared to Si 1) .
doi:10.5104/jiep.20.432 fatcat:d3xpxxqmzngqjjni62vt5tiagi