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Alpha-particle-induced soft errors and multiple cell upsets in 65-nm 10T subthreshold SRAM

Hiroshi Fuketa, Masanori Hashimoto, Yukio Mitsuyama, Takao Onoye
2010 2010 IEEE International Reliability Physics Symposium  

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This paper presents measurement results of alphaparticle-induced soft errors and multiple cell upsets (MCUs) in 65-nm 10T SRAM with a wide range of supply voltage from 1.0 V to 0.3 V. We reveal that the soft error rate (SER) at 0.3 V is eight times higher than SER at 1.0 V, and the ratio of MCUs to the total upsets increases as the supply voltage decreases. The SER and ratio of MCUs with body-biasing are also described. In addition, we investigate an impact of manufacturing variability on the
more » ... ft error immunity of each memory cell. In our measurement, a distinct influence of manufacturing variability is not observed even in subthreshold region.
doi:10.1109/irps.2010.5488826 fatcat:dv6o4izvbzg2dnmmvf4xaz5dey
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Hiroshi Fuketa, Masanori Hashimoto, Yukio Mitsuyama, Takao Onoye. "Alpha-particle-induced soft errors and multiple cell upsets in 65-nm 10T subthreshold SRAM." 2010 IEEE International Reliability Physics Symposium (2010)