We report a fabrication and demonstration of a GaN-based high-Q vertical-cavity light-emitting diode (VCLED). The GaN VCLED is composed of a 25-pair high-reflectivity (98%) GaN/AlN distributed Bragg reflector (DBR), an eight-pair SiO 2 /Ta 2 O 5 dielectric DBR (99%), and a three-λ optical thickness InGaN/GaN active region. It shows a very narrow linewidth of 0.52 nm, corresponding to a cavity Q-value of 895 at a driving current of 10 mA and a dominant emission peak wavelength at 465.3 nm. In

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... ition, this VCLED emission linewidth continues to decrease with an increasing injection current, suggesting a possible realization of GaN-based vertical-cavity surface emitting lasers. Index Terms-GaN, light-emitting diode (LED), vertical cavity, vertical-cavity LED (VCLED).