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Doubling of conductance steps in Si∕SiO2 quantum point contact
Journal of Applied Physics
We have calculated the effect of the oxidation-induced strain on the ballistic conductance in a Si/ SiO 2 quantum point contact. The strain-induced deformation potential was calculated semiempirically using a viscoelastic continuum model. The charge carriers are confined to the corners of the waveguide by both the strain-induced deformation potential and the Si/ SiO 2 band edge discontinuity. As a consequence nearly degenerate symmetric and antisymmetric transverse states are formed for the Sidoi:10.1063/1.2214212 fatcat:djkujos57jflpoekl7q5eksgs4