Rare-metal-free high-performance Ga-Sn-O thin film transistor

Tokiyoshi Matsuda, Kenta Umeda, Yuta Kato, Daiki Nishimoto, Mamoru Furuta, Mutsumi Kimura
2017 Scientific Reports  
Oxide semiconductors have been investigated as channel layers for thin film transistors (TFTs) which enable next-generation devices such as high-resolution liquid crystal displays (LCDs), organic light emitting diode (OLED) displays, flexible electronics, and innovative devices. Here, high-performance and stable Ga-Sn-O (GTO) TFTs were demonstrated for the first time without the use of rare metals such as In. The GTO thin films were deposited using radiofrequency (RF) magnetron sputtering. A
more » ... h field effect mobility of 25.6 cm 2 /Vs was achieved, because the orbital structure of Sn was similar to that of In. The stability of the GTO TFTs was examined under bias, temperature, and light illumination conditions. The electrical behaviour of the GTO TFTs was more stable than that of In-Ga-Zn-O (IGZO) TFTs, which was attributed to the elimination of weak Zn-O bonds.
doi:10.1038/srep44326 pmid:28290547 pmcid:PMC5349530 fatcat:vgdhascyfzgblbku5udpir7shu