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A power amplifier with efficiency improved using defected ground structure
2001
IEEE Microwave and Wireless Components Letters
Preserved Fulltext
This letter reports the effects of defected ground structure (DGS) on the output power and efficiency of a class A power amplifier. In order to evaluate the effects of DGS on the efficiency and output power, two class A GaAs FET amplifiers have been measured at 4.3 4.7 GHz. One of them has a 50 microstrip line with DGS at the output section, while the other has only 50 straight line. It is shown that DGS rejects the second harmonic at the output and yields improved output power and power added
doi:10.1109/7260.916333
fatcat:vilkcfqr55gindbmuf3fdrk3zq