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The influence of tin impurity on amorphous silicon crystallization was investigated using the methods of Raman scattering, Auger spectroscopy at ion etching, scanning electron microscopy and X-ray fluorescence microanalysis in thin films of Si:Sn alloy manufactured by thermal evaporation. Formation of Si crystals of the 2 to 4nm size has been found in the amorphous matrix alloy formed at the temperature 300 C. Total volume of nanocrystals correlates with the content of tin and can comprise asdoi:10.15407/spqeo16.04.331 fatcat:m4somb2vebeothvparsj52phzy