Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum

V.B. Neimash
2013 Semiconductor Physics, Quantum Electronics & Optoelectronics  
The influence of tin impurity on amorphous silicon crystallization was investigated using the methods of Raman scattering, Auger spectroscopy at ion etching, scanning electron microscopy and X-ray fluorescence microanalysis in thin films of Si:Sn alloy manufactured by thermal evaporation. Formation of Si crystals of the 2 to 4nm size has been found in the amorphous matrix alloy formed at the temperature 300 C. Total volume of nanocrystals correlates with the content of tin and can comprise as
more » ... uch as 80% of the film. The effect of tin-induced crystallization of amorphous silicon occurred only if there are clusters of metallic tin in the amorphous matrix. The mechanism of tin-induced crystallization of silicon that has been proposed takes into account the processes in eutectic layer at the interface metal tin -amorphous silicon.
doi:10.15407/spqeo16.04.331 fatcat:m4somb2vebeothvparsj52phzy