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The effect of polarization rotation on the performance of metal oxide semiconductor field-effect 9 transistors is investigated with a Landau-Ginzburg-Devonshire theory based model. In this analyt-10 ical model, depolarization field, polarization rotations and the electrostatic properties of the doped 11 silicon substrate are considered to illustrate the size effect of ferroelectric oxides and the stability 12 of polarization in each direction. Based on this model, we provide guidance indoi:10.1103/physrevapplied.4.044014 fatcat:5wzmskxi3jh6lloygvd7xwuza4