Designing Ferroelectric Field-Effect Transistors Based on the Polarization-Rotation Effect for Low Operating Voltage and Fast Switching

Yubo Qi, Andrew M. Rappe
2015 Physical Review Applied  
The effect of polarization rotation on the performance of metal oxide semiconductor field-effect 9 transistors is investigated with a Landau-Ginzburg-Devonshire theory based model. In this analyt-10 ical model, depolarization field, polarization rotations and the electrostatic properties of the doped 11 silicon substrate are considered to illustrate the size effect of ferroelectric oxides and the stability 12 of polarization in each direction. Based on this model, we provide guidance in
more » ... guidance in designing electronic 13 logic devices with low operating voltages and low active energy consumption: first, we demonstrate 14 that MOSFET operation could be achieved by polarization reorientation with a low operating volt-15 age, if the thickness of ferroelectric oxide is properly selected. Polarization reorientation can boost 16 the surface potential of the silicon substrate, leading to a subthreshold swing S lower than 60 17 mV/decade. We also demonstrate that, compared with polarization inversion, polarization rotation 18 offers significant advantages, including a lower energy barrier and a wider range of transferability in 19 nano-electronic devices. 20 136, 65 (1992).
doi:10.1103/physrevapplied.4.044014 fatcat:5wzmskxi3jh6lloygvd7xwuza4