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Characterization of optically dense, doped semiconductors by reflection THz time domain spectroscopy
1998
Applied Physics Letters
Preserved Fulltext
We present reflection THz-time domain spectroscopy measurements of the complex conductivity of n-type, 0.038 ⍀ cm GaAs and n-type, 0.22 ⍀ cm Si wafers. These measurements clearly demonstrate the efficacy of the reflection technique on highly conductive, optically dense samples and approach the precision of THz-TDS transmission measurements. Because the THz-bandwidth, reflection measurements extend beyond the carrier collision frequency, we obtain direct measures of the mobility and the carrier number density.
doi:10.1063/1.121531
fatcat:slxz4rvlcnad7fmroosnlm7tha