Double boundary trench isolation effects on a stacked gradient homojunction photodiode array

Paul V. Jansz, Steven Hinckley
2008 Optoelectronic and Microelectronic Materials and Devices (COMMAD), Conference on  
The effect of the width of inter-pixel double boundary trench isolation on the response resolution of a two dimensional CMOS compatible stacked gradient homojunction photodiode array was simulated. Insulation and P-doped double boundary trench isolation were compared. Both geometries showed improved crosstalk suppression and enhanced sensitivity compared to photodiode geometries previously investigated, combined with a reduction in fabrication complexity for the insulation DBTI configuration.
doi:10.1109/commad.2008.4802115 fatcat:owi2vovh7jgqpiv2nrppl7euom