A high-density metal-insulator-metal (MIM) capacitor with a lanthanide-doped HfO 2 dielectric prepared by physical vapor deposition (PVD) is presented for the first time. A significant improvement was shown in both the voltage coefficient of capacitance (VCC) and the leakage current density of MIM capacitor, yet the high capacitance density of HfO 2 dielectrics was maintained by achieving the doping of Tb with an optimum concentration in HfO 2 . This technique allows utilizing thinner

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... film in MIM capacitors and achieving a capacitance density as high as fF/ m 2 with leakage current and VCC values that fully meet requirements from year 2005 for radio frequency (RF) bypass capacitors applications. Index Terms-Capacitance density, co-sputtering, HfO 2 , lanthanide, metal-insulator-metal (MIM) capacitor, voltage coefficient of capacitor (VCC).