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In order to utilize the unique properties of carbon nanotubes in microelectronic devices, it is necessary to develop a technology which enables high yield, uniform, and preferential growth of perfectly aligned nanotubes. We demonstrate such a technology by using plasma-enhanced chemical-vapor deposition ͑PECVD͒ of carbon nanotubes. By patterning the nickel catalyst, we have deposited uniform arrays of nanotubes and single free-standing aligned nanotubes at precise locations. In the PECVDdoi:10.1063/1.1400085 fatcat:6is3nqzylvekpcxswsfdpx4ldm