Unoccupied band structure of wurtzite GaN(0001)

T. Valla, P. D. Johnson, S. S. Dhesi, K. E. Smith, D. Doppalapudi, T. D. Moustakas, E. L. Shirley
1999 Physical Review B (Condensed Matter)  
We report an inverse photoemission study of the unoccupied states of thin-film n-type wurtzite GaN. For incident electron energies below 30 eV, free-electron bands do not provide a good description of the initial state. However, using a calculated quasiparticle band structure for the initial state, we can obtain good agreement between our measurements and the calculated low-lying conduction bands. No evidence of unoccupied surface states is observed in the probed part of the Brillouin zone,
more » ... Brillouin zone, confirming earlier angle resolved photoemission studies, which identified the surface states on GaN͑0001͒ as occupied dangling bond states, resonant with the valence band.
doi:10.1103/physrevb.59.5003 fatcat:x5z45ejuk5cmlj3dw3n3ljxgoa