High quality N-polar GaN films grown with varied V/III ratios by metal–organic vapor phase epitaxy

Chengguo Li, Kang Zhang, Qiaoyu Zeng, Xuebing Yin, Xiaoming Ge, Junjun Wang, Qiao Wang, Chenguang He, Wei Zhao, Zhitao Chen
2020 RSC Advances  
N-polar GaN films (C, D, E, F) grown with varied V/III ratio show improved crystallinity and reduced impurity concentrations.
doi:10.1039/d0ra07856e fatcat:bqu6blbt3rgr3k3l2wa7olgh6y