Tuning the Performance of Organic Spintronic Devices Using X-Ray Generated Traps

J. Rybicki, R. Lin, F. Wang, M. Wohlgenannt, C. He, T. Sanders, Y. Suzuki
2012 Physical Review Letters  
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more » ... tion Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington VA, 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to any oenalty for failing to comply with a collection of information if it does not display a currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. a. REPORT Tuning the Performance of Organic Spintronic Devices Using X-Ray Generated Traps 14. ABSTRACT 16. SECURITY CLASSIFICATION OF: X rays produced during electron-beam deposition of metallic electrodes drastically change the performance of organic spintronic devices. The x rays generate traps with an activation energy of % 0:5 eV in a commonly used organic. These traps lead to a dramatic decrease in spin-diffusion length in organic spin valves. In organic magnetoresistive (OMAR) devices, however, the traps strongly enhance magnetoresistance. OMAR is an intrinsic magnetotransport phenomenon and does not rely on spin injection. We discuss our observations in the framework
doi:10.1103/physrevlett.109.076603 pmid:23006391 fatcat:ytc4m2jd7jhvfgijpordmndkyu