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Analysis of flatband voltage shift of metal/high-k/SiO2/Si stack based on energy band alignment of entire gate stack

Kai Han, Xiao-Lei Wang, Yong-Gui Xu, Hong Yang, Wen-Wu Wang
2014 Chinese Physics B  

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A theoretical model of flatband voltage (V FB ) of metal/high-k/SiO 2 /Si stack is proposed based on band alignment of entire gate stack, i.e., the V FB is obtained by simultaneously considering band alignments of metal/high-k, high-k/SiO 2 and SiO 2 /Si interfaces, and their interactions. Then the V FB of TiN/HfO 2 /SiO 2 /Si stack is experimentally obtained and theoretically investigated by this model. The theoretical calculations are in good agreement with the experimental results.
more » ... e, both positive V FB shift of TiN/HfO 2 /SiO 2 /Si stack and Fermi level pinning are successfully interpreted and attributed to the dielectric contact induced gap states at TiN/HfO 2 and HfO 2 /SiO 2 interfaces.
doi:10.1088/1674-1056/23/11/117702 fatcat:n453xgqimjb3pe2zmhsvu6gdum
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Kai Han, Xiao-Lei Wang, Yong-Gui Xu, Hong Yang, Wen-Wu Wang. "Analysis of flatband voltage shift of metal/high-k/SiO2/Si stack based on energy band alignment of entire gate stack." Chinese Physics B 23.11 (2014) 117702