A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2019; you can also visit the original URL.
The file type is
This letter presents the design and fabrication of a five-octave broadband low noise amplifier (LNA) using 0.1-μm GaAs pseudomorphic high-electron mobility transistor (pHEMT) technology. The multi-peaking bandwidth enhancement and noise reduction technique is proposed for a cascode topology to significantly improve the performance of the LNA. The fabricated LNA achieves a -3 dB bandwidth of 1-32 GHz with an average gain of 12.2 dB, an excellent noise figure (NF) of 1.9-2.6 dB, and andoi:10.1587/elex.16.20190096 fatcat:t6jjq4vdkvexvjjkse6ettk64y