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A five-octave broadband LNA MMIC using bandwidth enhancement and noise reduction technique

Lin Yang, Lin-An Yang, Taotao Rong, Zhi Jin, Yue Hao
2019 IEICE Electronics Express  

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This letter presents the design and fabrication of a five-octave broadband low noise amplifier (LNA) using 0.1-μm GaAs pseudomorphic high-electron mobility transistor (pHEMT) technology. The multi-peaking bandwidth enhancement and noise reduction technique is proposed for a cascode topology to significantly improve the performance of the LNA. The fabricated LNA achieves a -3 dB bandwidth of 1-32 GHz with an average gain of 12.2 dB, an excellent noise figure (NF) of 1.9-2.6 dB, and an
more » ... rred 1 dB compression point (OP1dB) of 10.2-12.7 dBm with good input/output matching over the entire bandwidth. To the best of the authors' knowledge, these results demonstrate the lowest room-temperature NF ever reported for fully integrated MMIC amplifiers with a bandwidth of 1 to more than 30 GHz.
doi:10.1587/elex.16.20190096 fatcat:t6jjq4vdkvexvjjkse6ettk64y
Citation

Lin Yang, Lin-An Yang, Taotao Rong, Zhi Jin, Yue Hao. "A five-octave broadband LNA MMIC using bandwidth enhancement and noise reduction technique." IEICE Electronics Express 16.7 (2019)