A new kind of CMOS high frequency oscillators

G. Petit, R. Kielbasa, V. Petit
RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE Radio Frequency integrated Circuits  
This paper presents a new 6.5GHz oscillator designed in a 0.5µm Silicon On Sapphire CMOS technology. This new structure is based on the principle of frequency multiplication integrated in the same stage than the generator. The layout particularities of it are presented in the case of a 8.5GHz fully integrated oscillator in the previous SOS technology that has an f T of 35GHz. Given measurements results prove the functionality of our design. Index Terms -Analog integrated circuit, Microwave
more » ... uit, Microwave oscillators, MOSFET oscillators, Silicon on insulator technology.
doi:10.1109/rfic.2005.1489889 fatcat:56iosklopjeqrjmakjovg5h4ry