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For the design and development of optical semiconductor devices based on quantum-well structures, the investigation of saturation phenomena is necessary for high optical power operation. By applying stationary physical models, nonlinear effects cannot be described adequately; hence, transient models are important for an accurate analysis. By utilizing transient models, saturation phenomena, signal delays, and distortions can be investigated. For the analysis of integrated optoelectronicdoi:10.1109/3.918582 fatcat:jdvsvvv4vjaifctd6gv5hg3mdy