The Outdoor Field Test of the 4T III-V on Si Tandem PV Module and Its Energy Yield Modeling [post]

Kenji Araki, Hiroki Tawa, Hiromu Saiki, Yasuyuki Ota, Kensuke Nishioka, Masafumi Yamaguchi
2020 unpublished
The outdoor field test of the 4-terminal III-V on Si tandem photovoltaic module (specifically, InGaP/GaAs on Si) was investigated and performance model, considering spectrum change affected by fluctuation of atmospheric parameters, was developed and validated. The 4-terminal III-V on Si tandem photovoltaic module had about 40 % advantage in seasonal performance loss compared with standard InGaP/GaAs/InGaAs 2-terminal tandem photovoltaic module. This advantage is expanded in (subarctic zone) < (temperate zone) < (subtropical zone).
doi:10.20944/preprints202003.0028.v1 fatcat:snwtnedu3jfcratdjmvwqrfcu4