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Stress-induced morphology and fine-line stability enhancement of NiSi on poly-SiGe with a buffer polycrystalline silicon interlayer
2008
Applied Physics Letters
Formation of nickel silicide and germanosilicide layers on Si(001), relaxed Si Ge Si ( 001 ) , and strained Si/relaxed Si Ge Si ( 001 ) and effect of postthermal annealing
doi:10.1063/1.2920202
fatcat:jn7x2z2hrfhrfgar5wi5gbd3pi