The Design of CMOS-Compatible Plasmonic Waveguides for Intra-Chip Communication

Yan Liu, Lu Ding, Yu Cao, Dongyang Wan, Guanghui Yuan, Baohu Huang, Aaron Voon-Yew Thean, Ting Mei, Thirumalai Venkatesan, Christian A. Nijhuis, Soojin Chua
2020 IEEE Photonics Journal  
A CMOS-compatible plasmonic waveguide with a metal or metal-like strip sandwiched in-between dielectrics has been proposed for intra-chip communication in the more-than-Moore era. A sequence of numerical models has been presented to evaluate the plasmonic waveguide performance. For device-level consideration, we demonstrated through simulations that Cu (1450 nm pitch) and PLD-TiN (900 nm pitch) plasmonic waveguides symmetrically sandwiched by SiO2 with much smaller and hence denser
more » ... , are promising candidates for use in global wires for the asynchronous communication. This design of plasmonic waveguide can bridge the CMOS circuitry and high-speed communication at optical frequencies within chip. For a system-level assessment, both of them have the same bandwidth throughput of ~ 19.8 Gbps. The other performance parameters of Cu and PLD-TiN plasmonic waveguides are respectively, signal latency of ~ 0.18 and 0.19 , energy dissipation per computing bit of ~ 2.5 × 10 −3 fJ/bit and 3.8 × 10 −3 fJ/bit, and 25% crosstalk coupling length of 155 μm and 125 μm. These findings suggest that plasmonic waveguide for intra-chip communication surpass those of existing electronic interconnects for all the categories of performance parameters.
doi:10.1109/jphot.2020.3024119 fatcat:ozxivytjvrdrvdqctgoczm7wjy