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Impurity impact ionization avalanche in p-type diamond
Applied Physics Letters
Electrical conductivity of a highly boron doped chemical vapor deposited diamond thin film has been studied at different temperatures under high electric field conditions. Current-voltage characteristics have been measured using pulsed technique to reduce thermal effects. Experimental results evidence deep impurity impact ionization avalanche in p-type diamond up to room temperature.doi:10.1063/1.3662403 fatcat:gz5ghidicfafha537pdva65wiq