A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2018; you can also visit the original URL.
The file type is application/pdf.
Impurity impact ionization avalanche in p-type diamond
2011
Applied Physics Letters
Preserved Fulltext
Other Versions
Electrical conductivity of a highly boron doped chemical vapor deposited diamond thin film has been studied at different temperatures under high electric field conditions. Current-voltage characteristics have been measured using pulsed technique to reduce thermal effects. Experimental results evidence deep impurity impact ionization avalanche in p-type diamond up to room temperature.
doi:10.1063/1.3662403
fatcat:gz5ghidicfafha537pdva65wiq