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Test structures for evaluating Al2O3 dielectrics for graphene field effect transistors on flexible substrates

Xinxin Yang, Marlene Bonmann, Andrei Vorobiev, Kjell Jeppson, Jan Stake
2018 2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)  

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We have developed a test structure for evaluating the quality of Al2O3 gate dielectrics grown on graphene for graphene field effect transistors on flexible substrates. The test structure consists of a metal/dielectric/ graphene stack on a PET substrate and requires only one lithography step for the patterning of the topside metal electrodes. Results from measurements of leakage current, capacitance and loss tangent are presented.
doi:10.1109/icmts.2018.8383768 fatcat:3bpbss53n5da3cxts3vqjtfb6u
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Xinxin Yang, Marlene Bonmann, Andrei Vorobiev, Kjell Jeppson, Jan Stake. "Test structures for evaluating Al2O3 dielectrics for graphene field effect transistors on flexible substrates." 2018 IEEE International Conference on Microelectronic Test Structures (ICMTS) (2018)