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This work reports on measurements of the Auger recombination coefficients in silicon wafers with pump-probe thermoreflectance techniques operating at two different excitation rates: 250 kHz ͑low repetition rate͒ and 80 MHz ͑high repetition rate͒. The different excitation frequencies give rise to different thermoreflectance signals in the Si samples, which is ascribed to the excited number density in the conduction band. In the low repetition rate case, the excited carriers recombine via Augerdoi:10.1063/1.3309759 fatcat:fdz67hc6gvebfdwypurnvtoygm