We report the fabrication of a highly transparent nanowire transistor using graphene as the gate and source-drain electrodes. Graphene gatesource-drain electrodes were simultaneously formed by a single-step transfer process. The graphene electrode and the nanowire channel exhibited near-ohmic contact characteristics. The threshold voltage, subthreshold slope, and mobility of the fabricated top-gate-structural In 2 O 3 nanowire transistor with graphene gate-source-drain electrodes were À4:54 V,

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... .43 V/dec, and 78 cm 2 /(VÁs) respectively. The optical transmissions in the region that contained nanowire transistors on the quartz substrate were 88.5-90.3% in the 400-780 nm wavelength range.