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The results of investigation of electronic transport in GaAs nanowires (NWs), which were grown by MBE and MOCVD on n-type GaAs(111) substrates are presented. The time-resolved dynamics of photocarriers were studied by opticalpump terahertz generation-probe time-domain spectroscopy. The dynamics of THz generation for different levels of excitation for the GaAs NWs grown by MBE can be explained by separation of photoinduced carriers in the contact field with subsequent screening of the contactdoi:10.3952/lithjphys.54110 fatcat:pzqtqxlturasfei3ularsqd7ua