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Post-deposition annealing of praseodymia films on Si(111) at low temperatures
2011
Journal of Physics: Condensed Matter
Thin heteroepitaxial praseodymia films with fluorite structure on Si(111) were annealed under ultra high vacuum conditions at temperatures in the region of 100 • C up to 300 • C. Afterwards investigations by X-ray diffraction, grazing incidence X-ray diffraction and X-ray reflectometry were performed to obtain information about structural changes of the film during the annealing process. For this reason, praseodymia Bragg peaks were carefully analyzed within the kinematic diffraction theory.
doi:10.1088/0953-8984/23/11/115904
pmid:21368363
fatcat:uvszmgxqdzd5fnhose7bhsqqba