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A study of the parameters of the process of impurityfree vacancy disordering (IFVD) of GaAs-AlGaAs quantum-well structures is presented. The study includes photoluminescence excitation measurements which show that the as-grown barrier/well interface is better fitted by an exponential profile than a square profile. This has a significant effect on the intermixed diffusion profiles. Also, deep level transient spectroscopy measurements have been conducted on samples that were processed using IFVD.doi:10.1109/2944.720477 fatcat:7fhphklrxrgqjgo62do3scrxau