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Dielectric function models for describing the optical properties of hexagonal GaN
2001
Journal of Applied Physics
Several different models have been employed for modeling the dielectric function of hexagonal GaN in the range from 1 to 10 eV. Models are compared in terms of number of parameters required, intricacy of model equations, and possibility of accurate estimation of important physical parameters, such as energies of critical points and exciton binding energies. Shortcomings and advantages of each model are discussed in detail. Excellent agreement with the experimental data for GaN has been achieved
doi:10.1063/1.1331069
fatcat:46txn545fnfevllhkoyz7cxyay