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Effect Of Cw Laser Annealing On Silicon Surface For Application Of Power Device
2011
Zenodo
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As application of re-activation of backside on power device Insulated Gate Bipolar Transistor (IGBT), laser annealing was employed to irradiate amorphous silicon substrate, and resistivities were measured using four point probe measurement. For annealing the amorphous silicon two lasers were used at wavelength of visible green (532 nm) together with Infrared (793 nm). While the green laser efficiently increased temperature at top surface the Infrared laser reached more deep inside and was
doi:10.5281/zenodo.1080968
fatcat:ixjp6jf3qnhxhbsi27iyk2a6ba