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The formation of silicon nanocrystals ͑Si-ncs͒ and their room temperature photoluminescence ͑PL͒ properties were investigated in samples elaborated by the evaporation method. Silicon oxide ͑SiO͒ single layer and SiO / SiO 2 multilayers with different SiO layer thicknesses from 1 to 5 nm were prepared and annealed at different temperatures up to 1050°C. The structure and the formation of Si-nc were studied by transmission electron microscopy ͑TEM͒ and by Fourier transform infrared ͑FTIR͒doi:10.1063/1.2402976 fatcat:5mtvdkm425fp7pyehu23aorqia