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The goal of this work is to use a particle-based simulation tool to perform a comparative study of two techniques used to calculate the small signal response of semiconductor devices. Several GaAs and Si devices have been modeled, simulated in the frequency domain to derive their frequency dependent complex output impedance. Conclusions are drawn regarding the applicability and advantages of both approaches.doi:10.1515/mcma.2004.10.3-4.227 fatcat:oie6msq53ngqpocorjbvv24ele