A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2020; you can also visit the original URL.
The file type is application/pdf
.
Behavior of Plasma-doped Graphene upon High Temperature Vacuum Annealing
2018
Applied Science and Convergence Technology
Herein, we present the behavior of plasma-doped graphene upon high-temperature vacuum annealing. An ammonia plasma-treated graphene sample underwent vacuum annealing for 1 h at temperatures ranging from 100 to 500 o C. According to Raman analysis, the structural healing of the plasma-treated sample is more pronounced at elevated annealing temperatures. The crystallite size of the plasma-treated sample increases from 13.87 to 29.15 nm after vacuum annealing. In addition, the doping level by
doi:10.5757/asct.2018.27.5.100
fatcat:lxbfvcwts5hebhr5kl3l5jwk5q