Behavior of Plasma-doped Graphene upon High Temperature Vacuum Annealing

Byeong-Joo Lee, Sung-Il Jo, Goo-Hwan Jeong
2018 Applied Science and Convergence Technology  
Herein, we present the behavior of plasma-doped graphene upon high-temperature vacuum annealing. An ammonia plasma-treated graphene sample underwent vacuum annealing for 1 h at temperatures ranging from 100 to 500 o C. According to Raman analysis, the structural healing of the plasma-treated sample is more pronounced at elevated annealing temperatures. The crystallite size of the plasma-treated sample increases from 13.87 to 29.15 nm after vacuum annealing. In addition, the doping level by
more » ... oping level by plasma treatment reaches 2.2 × 10 12 cm −2 and maintains a value of 1.6 × 10 12 cm −2 , even after annealing at 500 o C, indicating high doping stability. A relatively large decrease in the pyrrolic bonding components is observed by X-ray photoelectron spectroscopy as compared to other configurations, such as pyridinic and amino bindings, after the annealing. This study indicates that high-vacuum annealing at elevated temperatures provides a method for the structural reorganization of plasma-treated graphene without a subsequent decrease in doping level.
doi:10.5757/asct.2018.27.5.100 fatcat:lxbfvcwts5hebhr5kl3l5jwk5q