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In this paper, we describe a simple technique to achieve a thin nitrided polyoxide film, only requiring an extra nitrogen implantation to be compatible with the floating gate nonvolatile memory process. The integrity of polyoxides is improved by using the through-silicon-gate nitrogen implantation. Nitridation can be achieved by implanting nitrogen into polysilicon gate followed by a high temperature annealing to drive the nitrogen atoms across the polysilicon, through the polyoxide, and todoi:10.1149/1.2767854 fatcat:onlqgrz3qzbe7c22tqk6egnnhm