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Record RF performance of standard 90 nm CMOS technology
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.
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We have optimized 3 key RF devices realized in standard logic 90 nm CMOS technology and report a record performance in terms of n-MOS maximum oscillation frequency fmaz (280 GHz), varactoi tuning range and varactor and inductor quality factor. gration design rules the source and drain interconnect is made wider than the minimum design rule and realized in the metal levels 2, 3, and 4. For characterization. several of these unit cells are placed in parallel to achieve a total width of 120 pm.
doi:10.1109/iedm.2004.1419181
fatcat:ia5sa4s2yng7zphnxa56yyigd4