A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2018; you can also visit the original URL.
The file type is
Silicon carbide (SiC) has revolutionised semiconductor power device performance. It is a wide band gap semiconductor with an energy gap wider than 2eV and possesses extremely high power, high voltage switching characteristics and high thermal, chemical and mechanical stability. The SiC wafers are available in 6H, 4H, 2H and 3C polytypes. Because of its wide band gap, the leakage current of SiC is many orders of magnitude lower than that of silicon. Also, forward resistance of SiC power devicesdoaj:b4df4048a4604444812004218b43c7a2 fatcat:kroai575wjdcbdwcahxafhmmcy