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Fabrication of micromechanically-modulated MgO magnetic tunnel junction sensors
2010
2010 IEEE 23rd International Conference on Micro Electro Mechanical Systems (MEMS)
We have developed a hybrid magnetoresistive (MR)-MEMS sensor based on the monolithic integration of magnetic thin films and SOI MEMS fabrication techniques. MgO magnetic tunnel junctions (MTJ) on bulk micromachined silicon structures form a hybrid sensing platform in which the MEMS structure is used to mechanically modulate the magnetic field signal detected by the MTJ. We demonstrate the modulation of DC magnetic field through the mechanical motion of the cantilever at resonance. This allows
doi:10.1109/memsys.2010.5442320
fatcat:bi4ehaxxnnhjhf5ourqkcevsfy