Visible light emission has been obtained at room temperature by photoluminescence ͑PL͒ and electroluminescence ͑EL͒ from Pr-doped GaN thin films grown on Si͑111͒. The GaN was grown by molecular beam epitaxy using solid sources ͑for Ga and Pr͒ and a plasma gas source for N 2 . Photoexcitation with a He-Cd laser results in strong red emission at 648 and 650 nm, corresponding to the transition between 3 P 0 and 3 F 2 states in Pr 3ϩ . The full width at half maximum ͑FWHM͒ of the PL lines is ϳ1.2

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... , which corresponds to ϳ3.6 meV. Emission is also measured at near-infrared wavelengths, corresponding to lower energy transitions. Ar laser pumping at 488 nm also resulted in red emission, but with much lower intensity. Indium-tin-oxide Schottky contacts were used to demonstrate visible red EL from the GaN:Pr. The FWHM of the EL emission line is ϳ7 nm.