ZnO random laser diode arrays for stable single-mode operation at high power

H. K. Liang, S. F. Yu, H. Y. Yang
2010 Applied Physics Letters  
An array of highly disordered i-ZnO:Al͑3%͒ random cavities, which have 1 m width, 150 nm thickness, and 2 mm length, is sandwiched between n-ZnO:Al͑5%͒ and p-GaN/sapphire substrate to form an array of heterojunctions. The random cavities, which are electrically isolated and optically coupled with the adjacent random cavities, are laterally separated by a 1 m wide Al 2 O 3 dielectric insulator. Stable single-mode operation is observed from the laser diode array under high electrical pumping ͑i.e., Ͼ6 ϫ threshold current͒ at room temperature.
doi:10.1063/1.3527922 fatcat:qo2vc66nsrdvfixwyazpqfpv4e