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Effect of sapphire substrate nitridation on the elimination of rotation domains in ZnO epitaxial films
2004
Journal of Physics D: Applied Physics
Preserved Fulltext
The rotation domain structures in ZnO films grown on sapphire substrates under different pre-treatment conditions have been investigated by in situ reflection high-energy electron diffraction and ex situ x-ray diffraction (XRD). It was found that by appropriate nitridation treatment, forming a thin AlN film on the substrate, the rotation domains in ZnO films could be completely suppressed, and a full width at half maximum of only 180 arcsec was observed in the (0 0 0 2) reflection of XRD
doi:10.1088/0022-3727/37/24/c01
fatcat:xwxixw7mpjaz7g5vwv76q7wh6a