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Shallow Donor States Induced by In-Diffused Cu in ZnO: A Combined HREELS and Hybrid DFT Study
2011
Physical Review Letters
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A combined experimental and first principles study of Cu defects in bulk ZnO is presented. Cu particles are epitaxially deposited on the polar O-ZnOð000 " 1Þ surface at room temperature. Upon heating, a broadening of the quasielastic peak in high resolution electron energy loss spectra is observed, corresponding to an electronic doping effect of Cu atoms in bulk ZnO with an ionization energy of 88 meV. Cu impurities in ZnO, although commonly acting as acceptors, are presently observed to induce
doi:10.1103/physrevlett.106.066401
pmid:21405480
fatcat:eh4okaxymjcbvg43oydscktkia