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Negative Bias Temperature Instability "Recovery" under Negative Stress Voltage with Different Oxide Thicknesses
Chinese Physics Letters
Different phenomena are observed under negative gate voltage stress which is smaller than the previous degradation stress in PMOSFETs with different oxide thicknesses. We adopt the real time method to make a point of the drain current to study the degradation and recovery of negative bias temperature instability (NBTI). For the device with thin oxide, recovery phenomenon appears when smaller negative voltage stress was applied, due to the more influencing oxide charges detrapping effects thandoi:10.1088/0256-307x/28/1/017301 fatcat:krlnixikongntmwnkyrjwrm7hi