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Dopant-site effect in superconducting diamond (111) studied by atomic stereophotography
2007
Applied Physics Letters
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We studied the cause of high T C of superconducting boron-doped diamond ͑111͒ when compared with that of ͑001͒ even at the same boron concentration. The atomic stereophotograph revealed that a disproportionate boron concentration is located at one of the two sites in ͑111͒. The distinction of the dopant site exists only in ͑111͒ surface and does not exist in ͑001͒ surface. Furthermore, there is a theoretical prediction of high density of state at Fermi level in ordered dopant diamonds.
doi:10.1063/1.2824844
fatcat:ay2oaemycbajdpxxpoogexkhoi