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Enhancement of IC tray's surface conductivity using accelerator technology

J.S. Lee, J.K. Kil, J.H. Ha, J.H. Lee, B.H. Choi
PACS2001. Proceedings of the 2001 Particle Accelerator Conference (Cat. No.01CH37268)  

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We designed and manufactured a high current ion source for ion beam applications. As industrial application, we studied the relation between bombarded nitrogen fluence and surface resistivity on MPPO (Modified Polyphenylene Oxide) material, which are used for the IC tray, using the high current ion implantation technology. During the transportation, the electrical charge is induced on the tray surface and it generated the electrical shock into the IC chip. To prevent such damage, we developed
more » ... e implantation process for the IC tray surface modification, which carried out at an accelerating energy of 50keV, ion beam current of 50mA. The surface resistivity of MPPO IC tray that is normally insulating was decreased in the range of 10 12 to 10 6 Ω/sq by increasing the total dose from 7×10 14 ions/ c m 2 to 8×10 16 ions/cm 2 .
doi:10.1109/pac.2001.987911 fatcat:nsmlpg22gfe3haxwp342nymu6a
Citation

J.S. Lee, J.K. Kil, J.H. Ha, J.H. Lee, B.H. Choi. "Enhancement of IC tray's surface conductivity using accelerator technology." PACS2001. Proceedings of the 2001 Particle Accelerator Conference (Cat. No.01CH37268)