A copy of this work was available on the public web and has been preserved in the Wayback Machine. The capture dates from 2020; you can also visit the original URL.
The file type is application/pdf.
Going green for discrete power diode manufacturers
2009
2009 4th IEEE Conference on Industrial Electronics and Applications
Preserved Fulltext
Owing to its deep diffusion requirement for discrete power diode of rating above 400V and 1A, the time and temperature for p+ and n+ diffusion of a typical p+nn+ discrete power diode are around 1100 o C and more than 36 hours. This represents tremendous power consumption in the manufacturing of power diode. In this work, we propose an alternative method for producing the discrete power diode which requires only 400 o C and 4 hours of fabrication duration. Experimental results show that the
doi:10.1109/iciea.2009.5138814
fatcat:ker2ooqnyrcmtozfa5y57luqxi