Going green for discrete power diode manufacturers

Cher Ming Tan, Lina Sun, Chase Wang
2009 2009 4th IEEE Conference on Industrial Electronics and Applications  
Owing to its deep diffusion requirement for discrete power diode of rating above 400V and 1A, the time and temperature for p+ and n+ diffusion of a typical p+nn+ discrete power diode are around 1100 o C and more than 36 hours. This represents tremendous power consumption in the manufacturing of power diode. In this work, we propose an alternative method for producing the discrete power diode which requires only 400 o C and 4 hours of fabrication duration. Experimental results show that the
more » ... produced do possess typical diode electrical characteristics. Index Terms-power diode, wafer bonding, energy consumption, junction interface characterization I.
doi:10.1109/iciea.2009.5138814 fatcat:ker2ooqnyrcmtozfa5y57luqxi